to - 220 f plastic - encapsulate diodes sbl 4 030, 35 , 40 , 45 , 50 fct schottky barrier rectifier features ? schottky barrier chip ? guard rin g die construction for transient protection ? low power loss,high efficiency ? high surge capability ? high current capability and low forward voltage drop ? for use in low voltage, high frequency inverters,free wheeling, and polarity protection applications maxi mum ratings ( t a =25 unless otherwise noted ) value unit symbol parameter sbl 4 0 30fct sbl 4 0 35fct sbl 4 0 40fct sbl 4 0 45fct sbl 4 0 50fct v rrm p eak repetitive reverse voltage v rwm working peak reverse voltage v r dc bloc king voltage 30 35 40 45 50 v v r(rms) rms reverse voltage 21 24.5 28 31.5 35 v i o average rectified output current 40 a i fsm non - repetitive peak f orward surge current 8.3ms half sine wave 400 a p d power d issipation 2 w r ja thermal r esistance from j unction to a mbient 50 /w t j junction t emperature 125 t stg s torage t emperature - 5 5 ~+ 150 to - 220 f 1. anode 2. cathode 3. anode 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise specified) parameter symb ol device test conditions m in typ m ax u nit sbl 4 030fct 30 sbl 4 0 35 fct 35 sbl 4 0 40 fct 40 sbl 4 0 45 fct 45 reverse voltage v (br) sbl 4 0 50 fct i r =1 m a 50 v sbl4 030fct v r = 30 v sbl 4 0 35 fct v r = 35 v sbl 4 0 40 fct v r = 40 v sbl 4 0 45 fct v r = 45 v reverse c urrent i r sbl 4 0 50 fct v r = 50 v 1 m a sbl 4 030 fct - 40 45 fct 0.5 8 forward vo ltage v f sbl 4 050 fct i f = 20 a 0.7 v typical t otal capacitance c tot sbl 4 030 fct - 40 50 fct v r = 4 v,f=1mhz 800 pf 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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